Raman Spectra of Amorphous Si and Related Tetrahedrally Bonded Semiconductors
J.E. Smith(IBM Research - Thomas J. Watson Research Center), M. H. Brodsky(IBM Research - Thomas J. Watson Research Center), B. L. Crowder(IBM Research - Thomas J. Watson Research Center), M. I. Nathan(IBM Research - Thomas J. Watson Research Center), A. Pinczuk(University of Pennsylvania)
Cited by 379
Abstract
Raman scattering has been studied in the amorphous form of Si and several related, tetrahedrally bonded semiconductors (Ge, GaAs, GaP, InSb). All vibrational modes of the material can take part in the scattering process, and the Raman spectrum is a measure of the density of vibrational states. The amorphous phases are found to have vibrational spectra very similar to the corresponding crystals, reflecting the similarity in short-range order of the two phases.
Related Papers
No related papers found
Powered by citation graph analysis