Unusual properties of the fundamental band gap of InN
Junqiao Wu(Lawrence Berkeley National Laboratory), W. Walukiewicz(Lawrence Berkeley National Laboratory), K. M. Yu(Lawrence Berkeley National Laboratory), Joel W. Ager(Lawrence Berkeley National Laboratory), E. E. Häller(Lawrence Berkeley National Laboratory), Hai Lu(Cornell University), W. J. Schaff(Cornell University), Yoshiki Saito(Ritsumeikan University), Yasushi Nanishi(Ritsumeikan University)
Cited by 1,463Open Access
Abstract
The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. These three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free-electron concentration of the sample. The peak energy exhibits very weak hydrostatic pressure dependence, and a small, anomalous blueshift with increasing temperature.
Related Papers
No related papers found
Powered by citation graph analysis