Tailoring Magnetic Doping in the Topological Insulator<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Se</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>
Jian‐Min Zhang(Beijing Institute of Technology), Yugui Yao(Beijing Institute of Technology), Wenguang Zhu(University of Science and Technology of China), Ying Zhang(Toyota Research Institute), Di Xiao(Pacific Northwest National Laboratory)
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