Junction formation with pure and doped polyacetylene
Makiko Ozaki(University of Pennsylvania), D. Peebles(University of Pennsylvania), B. R. Weinberger(University of Pennsylvania), C. K. Chiang(University of Pennsylvania), S. C. Gau(University of Pennsylvania), Alan J. Heeger(University of Pennsylvania), Alan G. MacDiarmid(University of Pennsylvania)
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Abstract
A variety of rectifying junctions have been fabricated using doped and undoped (CH)x. Schottky diodes formed between metallic AsF5-doped (CH)x and n-type semiconductors indicate high [CH(AsF5)y]x electronegativity. The p-type character of undoped trans- (CH)x is confirmed by Schottky-barrier formation with low-work-function metals. An undoped p- (CH)x : n-ZnS heterojunction has been demonstrated with an open-circuit voltage of 0.8 V. These results point to the potential of (CH)x as a photosensitive material for use in solar-cell applications.
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