Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications
Feng Xie(Nanjing University), Jianjun Zhou(Nanjing University), Liang Li(University of Electronic Science and Technology of China), Rong Zhang(Xiamen University), Dunjun Chen(Nanjing University), Xiaoli Ji(Nanjing University), Feng Yan(Hong Kong Polytechnic University), Youdou Zheng(Collaborative Innovation Center of Advanced Microstructures), Hai Lu(Nanjing University)
Cited by 92
Related Papers
Infrared Photodetectors Based on CVD‐Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity
|Advanced Materials|2012|776
Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene
|Advanced Functional Materials|2016|693
Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
|Light Science & Applications|2021|449
The Application of Highly Doped Single-Layer Graphene as the Top Electrodes of Semitransparent Organic Solar Cells
|ACS Nano|2011|309
Independent Amplitude Control of Arbitrary Orthogonal States of Polarization via Dielectric Metasurfaces
|Physical Review Letters|2020|284