Selective Etching of Metallic Carbon Nanotubes by Gas-Phase Reaction
Guangyu Zhang(Stanford University), Pengfei Qi(Stanford University), Xinran Wang(Stanford University), Yuerui Lu(Stanford University), Xiaolin Li(Stanford University), Ryan Tu(Stanford University), Sarunya Bangsaruntip(Stanford University), David J. Mann(Stanford University), Li Zhang(Stanford University), Hongjie Dai(Stanford University)
Cited by 534
Abstract
Metallic and semiconducting carbon nanotubes generally coexist in as-grown materials. We present a gas-phase plasma hydrocarbonation reaction to selectively etch and gasify metallic nanotubes, retaining the semiconducting nanotubes in near-pristine form. With this process, 100% of purely semiconducting nanotubes were obtained and connected in parallel for high-current transistors. The diameter- and metallicity-dependent "dry" chemical etching approach is scalable and compatible with existing semiconductor processing for future integrated circuits.
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