Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices
Giovanni Isella(Politecnico di Milano), Daniel Chrastina(Politecnico di Milano), B. Rössner(ETH Zurich), T. Hackbarth(Daimler (Germany)), H.-J. Herzog(Daimler (Germany)), U. König(Daimler (Germany)), H. von Känel(Politecnico di Milano)
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