Resonant cavity light-emitting diode

E. F. Schubert(AT&T (United States)), Y.-H. Wang(AT&T (United States)), A. Y. Cho(AT&T (United States)), Li Tu(AT&T (United States)), G. J. Zydzik(AT&T (United States))
Applied Physics Letters
February 24, 1992
10.1063/1.106489
Cited by 356

Abstract

A novel concept of a light-emitting diode (LED) is proposed and demonstrated in which the active region of the device is placed in a resonant optical cavity. As a consequence, the optical emission from the active region is restricted to the modes of the cavity. Resonant cavity light-emitting diodes (RCLED) have higher spectral purity and higher emission intensity as compared to conventional light emitting diodes. Results on a top-emitting RCLED structure with AlAs/AlxGa1−xAs quarter wave mirrors grown by molecular beam epitaxy are presented. The experimental emission linewidth is 17 meV (0.65 kT) at room temperature. The top-emission intensity is a factor of 1.7 higher as compared to conventional LEDs.

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