High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates
Patrick Kung(Northwestern University), A. Saxler(Northwestern University), X. Zhang(Northwestern University), D. Walker(Northwestern University), T. C. Wang(Northwestern University), Ian T. Ferguson(Northwestern University), Manijeh Razeghi(Northwestern University)
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Abstract
The growth of high quality AlN and GaN thin films on basal plane sapphire, (100), and (111) silicon substrates is reported using low pressure metalorganic chemical vapor deposition. X-ray rocking curve linewidths of about 100 and 30 arcsec were obtained for AlN and GaN on sapphire, respectively. Room-temperature optical transmission and photoluminescence (of GaN) measurements confirmed the high quality of the films. The luminescence at 300 and 77 K of the GaN films grown on basal plane sapphire, (100), and (111) silicon was compared.
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