An all‐organic "soft" thin film transistor with very high carrier mobility
Françis Garnier(Centre National de la Recherche Scientifique), Gilles Horowitz(Centre National de la Recherche Scientifique), Xuezhou Peng(Centre National de la Recherche Scientifique), Denis Fichou(Centre National de la Recherche Scientifique)
Cited by 566
Abstract
The first all‐organic electronic device to boast the same characteristics as silicon‐based ones is reported. Not only does the use of an organic insulating layer result in an increased charge‐carrier mobility in the semiconductor, but it also imparts a flexible quality to the whole device which allows it to be rolled up, bent or twisted without reducing performance. The organic‐based devices also show remarkable tolerance towards moisture and impurities, production being possible in the normal laboratory environment.
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