Room temperature ferromagnetic properties of (Ga, Mn)N
Meredith Reed(North Carolina State University), N. A. El-Masry(North Carolina State University), Hans H. Stadelmaier(North Carolina State University), M. K. Ritums(North Carolina State University), M. J. Reed(North Carolina State University), C. A. Parker(North Carolina State University), J. C. Roberts(North Carolina State University), S. M. Bedair(North Carolina State University)
Cited by 673
Abstract
Dilute magnetic semiconductor GaN with a Curie temperature above room temperature has been achieved by manganese doping. By varying the growth and annealing conditions of Mn-doped GaN we have identified Curie temperatures in the range of 228–370 K. These Mn-doped GaN films have ferromagnetic behavior with hysteresis curves showing a coercivity of 100–500 Oe. Structure characterization by x-ray diffraction and transmission electron microscopy indicated that the ferromagnetic properties are not a result of secondary magnetic phases.
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