High Mobility Thin Film Transistors with Transparent ZnO Channels
Junya Nishii(Tohoku University), M. Kawasaki(RIKEN Advanced Science Institute), S. Kishimoto(Tohoku University), K. Saikusa(Tokyo Institute of Technology), Akira Ohtomo(Tohoku University), I. Ohkubo(Tokyo Institute of Technology), Hideo Ohno(Tohoku University), F. Matsukura(Tohoku University), Tomoteru Fukumura(Japan Science and Technology Agency), Tetsuya Aita(Tokyo Institute of Technology), Faruque M. Hossain(Tokyo Institute of Technology), Shingo Takagi(Tokyo Institute of Technology), Yuji Ohmaki(Tohoku University), Hideomi Koinuma(Cabinet Office), Y. Ohno(Tohoku University)
Cited by 288
Related Papers
Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide
|Science|2001|2.5k
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
|Nature Materials|2004|2.1k
Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films
|Applied Physics Letters|1998|1.8k
Mg x Zn 1−x O as a II–VI widegap semiconductor alloy
|Applied Physics Letters|1998|1.5k
Atomic Control of the SrTiO <sub>3</sub> Crystal Surface
|Science|1994|1.2k