Synthesis, Structure, and Properties of Boron‐ and Nitrogen‐Doped Graphene
Leela S. Panchakarla(Jawaharlal Nehru Centre for Advanced Scientific Research), K. S. Subrahmanyam(Jawaharlal Nehru Centre for Advanced Scientific Research), Subhankar Saha(Indian Institute of Science Bangalore), A. Govindaraj(Jawaharlal Nehru Centre for Advanced Scientific Research), H. R. Krishnamurthy(Indian Institute of Science Bangalore), Umesh V. Waghmare(Jawaharlal Nehru Centre for Advanced Scientific Research), C. N. R. Rao(Jawaharlal Nehru Centre for Advanced Scientific Research)
Cited by 1,795
Abstract
Boron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed.
Related Papers
No related papers found
Powered by citation graph analysis