A self-consistent iterative scheme for one-dimensional steady state transistor calculations

Abstract

A self-consistent iterative scheme for the numerical calculation of dc potentials and currents in a one-dimensional transistor model is presented. Boundary conditions are applied only at points representing contacts. Input data are: doping profile, parameters governing excess carrier recombination, parameters describing the dependence of mobility on doping and on electric field, applied emitter and collector voltages, and a trial solution for the electrostatic potential. The major limitation of the present approach results from use of Boltzmann rather than Fermi statistics. Convergence of the iteration scheme is good for low and moderate injection levels.