Defect structure introduced during operation of heterojunction GaAs lasers

Abstract

The nature and origin of the defects responsible for the rapid degradation of stripe geometry GaAs–GaAlAs double-heterostructure lasers have been identified by transmission electron microscopy. These defects are formed by a three-dimensional dislocation network which originates at a dislocation crossing the GaAlAs and GaAs epilayers. The propagation of the dislocation network takes place by a climb mechanism induced by the operation of the device.