Band-gap tailoring of ZnO by means of heavy Al doping
Bo E. Sernelius(Oak Ridge National Laboratory), K.-F. Berggren(Linköping University), Zechen Jin(Chalmers University of Technology), I. Hamberg(Chalmers University of Technology), Claes‐Göran Granqvist(Chalmers University of Technology)
Cited by 879Open Access
Abstract
Films of ZnO:Al were produced by weakly reactive dual-target magnetron sputtering. Optical band gaps, evaluated from spectrophotometric data, were widened in proportion to the Al doping. The widening could be quantitatively reconciled with an effective-mass model for n-doped semiconductors, provided the polar character of ZnO was accounted for.
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