Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

Zengcheng Li(Chinese Academy of Sciences), Jianping Liu(Chinese Academy of Sciences), Meixin Feng(Chinese Academy of Sciences), Kun Zhou(Chinese Academy of Sciences), Shuming Zhang(Chinese Academy of Sciences), Hui Wang(Chinese Academy of Sciences), Deyao Li(Chinese Academy of Sciences), Liqun Zhang(Chinese Academy of Sciences), Degang Zhao(Chinese Academy of Sciences), Desheng Jiang(Chinese Academy of Sciences), Huaibing Wang(Chinese Academy of Sciences), Hui Yang(Chinese Academy of Sciences)
Applied Physics Letters
October 7, 2013
10.1063/1.4824850
Cited by 84

Abstract

Local InGaN quantum well (QW) decomposition and resultant inhomogeneous luminescence in green laser diode (LD) epitaxial structures are investigated using micro-photoluminescence, Z-contrast scanning transmission electron microscopy, and high-resolution transmission electron microscopy. The local InGaN QW decomposition is found to happen during p-type layer growth due to too high thermal budget and may initiate at the InGaN/GaN QW upper interface probably due to the formation of In-rich InGaN clusters there. Reducing thermal budget and optimizing InGaN/GaN QW growth suppress the local InGaN QW decomposition, and green LD structures with homogeneous luminescence and bright electroluminescence (EL) intensity are obtained.

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