Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
Yu‐Chuan Lin(Pennsylvania State University), R. Ghosh(Pennsylvania State University), Rafik Addou(The University of Texas at Dallas), Ning Lü(The University of Texas at Dallas), Sarah M. Eichfeld(Pennsylvania State University), Hui Zhu(The University of Texas at Dallas), Ming‐Yang Li(Institute of Atomic and Molecular Sciences, Academia Sinica), Xin Peng(The University of Texas at Dallas), Moon J. Kim(The University of Texas at Dallas), Lain‐Jong Li(King Abdullah University of Science and Technology), Robert M. Wallace(The University of Texas at Dallas), Suman Datta(Pennsylvania State University), Joshua A. Robinson(Pennsylvania State University)
Cited by 457Open Access
Abstract
Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2-WSe2-graphene and WSe2-MoS2-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.
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