Bright photoemission from interacting excitons at the interface localized sites in CdS/ZnSe type-II quantum structures
Kazuo Ôno(The University of Tokyo), S. Takeyama(The University of Tokyo), Hirofumi Mino(Chiba University), T. Suemoto(The University of Tokyo), R. Akimoto(National Institute of Advanced Industrial Science and Technology), T. Makino(University of Fukui), Keiji Saito(Kyoto University), Makoto Nakajima(Institute for Laser Technology)
Cited by 3
Related Papers
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
|Nature Materials|2004|2.1k
Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films
|Applied Physics Letters|2001|655
Room-temperature stimulated emission of excitons in ZnO/(Mg, Zn)O superlattices
|Applied Physics Letters|2000|261
Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001) substrates
|Applied Physics Letters|1999|260
Room-temperature luminescence of excitons in ZnO/(Mg, Zn)O multiple quantum wells on lattice-matched substrates
|Applied Physics Letters|2000|233