Device scaling in sub-100nm pentacene field-effect transistors

George S. Tulevski(IBM (United States)), Cherie R. Kagan(Texas A&M University System), Colin Nuckolls(Columbia University), Teresita Graham(IBM Research - Thomas J. Watson Research Center), Ali Afzali(IBM (United States))
Applied Physics Letters
October 30, 2006
10.1063/1.2364154
Cited by 42

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