Insulator–Metal Transitions, Giant Magnetoresistance, and Related Aspects of the Cation-Deficient LaMnO3Compositions La1−δMnO3and LaMn1−δ′O3
A. Arulraj(Indian Institute of Science Bangalore), C. N. R. Rao(Jawaharlal Nehru Centre for Advanced Scientific Research), R. Mahesh(University of California, Santa Barbara), R. Mahendiran(Indian Institute of Science Bangalore), G. N. Subbanna(Indian Institute of Science Bangalore), A. K. Raychaudhuri(Indian Institute of Science Bangalore)
Cited by 101
Related Papers
Sensing Behavior of Atomically Thin-Layered MoS<sub>2</sub> Transistors
|ACS Nano|2013|1.4k
Hysteresis in Single-Layer MoS<sub>2</sub> Field Effect Transistors
|ACS Nano|2012|1.1k
GaS and GaSe Ultrathin Layer Transistors
|Advanced Materials|2012|674
Structure, electron-transport properties, and giant magnetoresistance of hole-doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">LaMnO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>systems
|Physical review. B, Condensed matter|1996|541
Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO<sub>2</sub>/Si Substrates
|Advanced Functional Materials|2012|491