Improved breakdown-speed tradeoff of InP/InGaAs single heterojunction bipolar transistor using a novel p/sup -/-n/sup -/ collector structure
Hin-Fai Chau(Texas Instruments (United States)), J.N. Tothill(IQE (United Kingdom)), Geok Ing Ng(University of Michigan), C. Meaton(IQE (United Kingdom)), K. Tomizawa, D. Pavlidis(University of Michigan), D. M. H. Baker(Smithsonian Tropical Research Institute)
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