Giant tunneling magnetoresistance in Co2MnSi∕Al–O∕Co2MnSi magnetic tunnel junctions
Yuya Sakuraba(Tohoku University), Masashi Hattori(Tohoku University), Mikihiko Oogane(Tohoku University), Yasuo Ando(Tohoku University), H. Katô(Tohoku University), Akimasa Sakuma(Tohoku University), T. Miyazaki(Tohoku University), Hitoshi Kubota(National Institute of Advanced Industrial Science and Technology)
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Abstract
Magnetic tunnel junctions (MTJs) with a stacking structure of Co2MnSi∕Al–O∕Co2MnSi were fabricated using magnetron sputtering system. Fabricated MTJ exhibited an extremely large tunneling magnetoresistance (TMR) ratio of 570% at low temperature, which is the highest TMR ratio reported to date for an amorphous Al–O tunneling barrier. The observed dependence of tunneling conductance on bias voltage clearly reveals the half-metallic energy gap of Co2MnSi. The origins of large temperature dependence of TMR ratio were discussed on the basis of the present results.
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