Leaderboards/GaN-based semiconductor devices and materials

GaN-based semiconductor devices and materials

Last updated July 7, 2026

Rising Stars

New and hot

Rising Stars Researchers

1
Pargam Vashishtha
University of Wisconsin–Madison
2
Luca Nela
École Polytechnique Fédérale de Lausanne
3
Jialin Yang
Shihezi University
4
Longheng Qi
Hong Kong University of Science and Technology
5
Nicolò Zagni
University of Modena and Reggio Emilia
6
Yiwen Song
Carnegie Mellon University
7
Mihyang Sheen
Samsung (South Korea)
8
John Hayden
Materials Technology (United Kingdom)
9
G. Purnachandra Rao
National Institute Of Technology Silchar
10
Mohamadali Malakoutian
Stanford University

Rising Stars Papers

1
CVD-Grown Monolayer MoS<sub>2</sub> and GaN Thin Film Heterostructure for a Self-Powered and Bidirectional Photodetector with an Extended Active Spectrum
ACS Applied Materials & Interfaces|2024
99 cit.
2
Self-bias Mo–Sb–Ga multilayer photodetector encompassing ultra-broad spectral response from UV–C to IR–B
Optics & Laser Technology|2024
46 cit.
3
A Self-Driven Bidirectional Photocurrent Photodetector for Optically Controlled Logic Gates Utilizes a GaN-Nanowall Network
ACS Applied Optical Materials|2024
45 cit.
4
Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces
Advanced Electronic Materials|2024
35 cit.
5
Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures
Advanced Functional Materials|2025
34 cit.
6
A Solar-Blind Ultraviolet Photodetector with Self-Biasing Capability, Controlled by Surface Potential based on GaN Hexagonal Nano-Spikes
Materials Letters|2024
30 cit.
7
Wavelength-modulated polarity switch self-powered Bi2Se3/GaN heterostructure photodetector
Materials Science in Semiconductor Processing|2024
29 cit.
8
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD
Journal of Semiconductors|2024
9 cit.
9
High-performance solar-blind UV bipolar junction phototransistor based on a vertical Pt/Ga2O3/p-Si Schottky emitter structure
Journal of Alloys and Compounds|2024
8 cit.
10
Effect of temperature dependence of <scp>2DEG</scp> on device characteristics of field‐plated recessed‐gate <scp>III</scp>‐nitride/<i>β</i>‐<scp>Ga<sub>2</sub>O<sub>3</sub></scp> nano‐<scp>HEMT</scp>
International Journal of Numerical Modelling Electronic Networks Devices and Fields|2024
7 cit.

Emerging Leaders

Gaining momentum

Emerging Leaders Researchers

1
Elison Matioli
École Polytechnique Fédérale de Lausanne
2
Haiding Sun
University of Science and Technology of China
3
Carlo De Santi
University of Padua
4
Pengfei Tian
Robotics Research (United States)
5
Sukwon Choi
Pennsylvania State University
6
Ke Jiang
University of Chinese Academy of Sciences
7
Ruixia Wu
Hunan University
8
Marco Bernardi
California Institute of Technology
9
Yuhuai Liu
Zhengzhou University
10
Tingzhu Wu
Xiamen University

Emerging Leaders Papers

1
Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre
Nature Electronics|2022
141 cit.
2
A three-terminal light emitting and detecting diode
Nature Electronics|2024
131 cit.
3
Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires
Light Science & Applications|2022
112 cit.
4
Light‐Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte‐Assisted Bipolar p–n Junction
Advanced Materials|2023
112 cit.
5
Electronic metadevices for terahertz applications
Nature|2023
100 cit.
6
Optoelectronic synapses with chemical-electric behaviors in gallium nitride semiconductors for biorealistic neuromorphic functionality
Nature Communications|2024
93 cit.
7
Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional Electron Gas for High‐Quality Imaging
Advanced Materials|2024
82 cit.
8
Demonstration of Photoelectrochemical‐Type Photodetectors Using Seawater as Electrolyte for Portable and Wireless Optical Communication
Advanced Optical Materials|2022
81 cit.
9
Manipulating Surface Band Bending of III‐Nitride Nanowires with Ambipolar Charge‐Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication
Advanced Materials|2023
78 cit.
10
Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors
Applied Physics Letters|2022
74 cit.

Current Senior Leaders

Established & currently active

Current Senior Leaders Researchers

1
Umesh K. Mishra
Indian Institute of Technology Guwahati
2
Shuji Nakamura
University of California, Santa Barbara
3
James S. Speck
University of California, Santa Barbara
4
Isamu Akasaki
Nagoya University
5
Chris G. Van de Walle
University of California, Santa Barbara
6
Steven P. DenBaars
University of California, Santa Barbara
7
H. Morkoç̌
Virginia Commonwealth University
8
Kevin J. Chen
Hong Kong University of Science and Technology
9
Takashi Mukai
National Institute of Advanced Industrial Science and Technology
10
H. X. Jiang
Texas Tech University

Current Senior Leaders Papers

1
Fundamentals of zinc oxide as a semiconductor
Reports on Progress in Physics|2009
3.8k cit.
2
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
Applied Physics Letters|1994
3.8k cit.
3
First-principles calculations for defects and impurities: Applications to III-nitrides
Journal of Applied Physics|2004
3.2k cit.
4
First-principles calculations for point defects in solids
Reviews of Modern Physics|2014
2.9k cit.
5
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Journal of Applied Physics|1994
2.7k cit.
6
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Japanese Journal of Applied Physics|1996
2.5k cit.
7
Native point defects in ZnO
Physical Review B|2007
2.4k cit.
8
AlGaN/GaN HEMTs-an overview of device operation and applications
Proceedings of the IEEE|2002
2.2k cit.
9
Band lineups and deformation potentials in the model-solid theory
Physical review. B, Condensed matter|1989
2.2k cit.
10
Hydrogen as a Cause of Doping in Zinc Oxide
Physical Review Letters|2000
2.2k cit.

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