Cited by 176
Hangzhou Normal University
Publishes on Quantum Dots Synthesis And Properties, Semiconductor Quantum Structures and Devices, Chalcogenide Semiconductor Thin Films. 43 papers and 552 citations.
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In this paper, a fast step heterodyne light-induced thermoelastic spectroscopy (SH-LITES) sensor using a high-frequency quartz tuning fork (QTF) with resonant frequency of ~100 kHz is reported for the first time. The theoretical principle of heterodyne LITES (H-LITES) signal generation is analyzed firstly, and an acetylene (C<sub>2</sub>H<sub>2</sub>) H-LITES sensor is established to verify its performance. Experimental comparisons between the high-frequency QTF and a standard commercial QTF with resonant frequency of ~32.768 kHz reveal that the high-frequency QTF exhibits a tenfold faster response time. Specifically, the H-LITES sensor with this QTF achieves a 33 ms measurement cycle, 90% shorter than commercial counterparts. Furthermore, The SH-LITES technique is proposed to further shorten the scanning time to 15 ms, which achieves the shortest LITES measurement time known to date. To demonstrate its advantages in dynamic gas detection, an H<sub>2</sub>O-LITES system integrating both QTF types is constructed for real-time monitoring of H<sub>2</sub>O concentration during different respiration patterns. Comparative measurements show that the SH-LITES more accurately captures dynamic H<sub>2</sub>O concentration fluctuations during respiration, outperforming the commercial QTF-based H-LITES sensor in rapid response scenarios.
Quantum dot (QD) based light-emitting diodes (QLEDs) hold great promise for next-generation lighting and displays. In order to reach a wide color gamut, deep red QLEDs emitting at wavelengths beyond 630 nm are highly desirable but have rarely been reported. Here, we synthesized deep red emitting ZnCdSe/ZnSeS QDs (diameter ∼16 nm) with a continuous gradient bialloyed core–shell structure. These QDs exhibit high quantum yield, excellent stability, and a reduced hole injection barrier. The QLEDs based on ZnCdSe/ZnSeS QDs have an external quantum efficiency above 20% in the luminance range of 200–90000 cd m–2 and a record T95 operation lifetime (time for the luminance to decrease to 95% of its initial value) of more than 20000 h at a luminance of 1000 cd m–2. Furthermore, the ZnCdSe/ZnSeS QLEDs have outstanding shelf stability (>100 days) and cycle stability (>10 cycles). The reported QLEDs with excellent stability and durability can accelerate the pace of QLED applications.
Abstract InP‐based quantum dots (QDs) are one of the most promising heavy‐metal‐free materials for light‐emitting applications to substitute cadmium‐analogous QDs. With a bulk band gap of 1.35 eV, InP QDs can be made to emit light in the deep red and even near‐infrared region by adjusting the size. Deep‐red light‐emitting diodes (LEDs) are of great interest for promoting the growth of plants and accurate red LED displays. However, the synthesis and the fabrication of InP‐based quantum‐dot LEDs (QLEDs) emitting in the deep red region are still under development. Here, the study reports deep‐red InP/ZnSe/ZnSeS/ZnS core‐shell QDs with a photoluminescence (PL) emission peak at 680 nm and a PL quantum yield up to 95%, which is the highest among reported deep‐red QDs. Multi‐shell with a transition layer of ZnSeS is realized to decrease the lattice mismatch in the shell and increase the shell thickness, which efficiently confines charge carriers and reduces non‐radiative recombinations. In addition, the core‐shell InP QLED achieves a high luminescence of 2263 cd m −2 and an external quantum efficiency up to 6.5%. This report provides a new strategy for promoting the development of deep‐red QLEDs for next‐generation lighting and display devices.