Sheikh A. Akbar

Recently one dimensional (1-D) nanostructured metal-oxides have attracted much attention because of their potential applications in gas sensors. 1-D nanostructured metal-oxides provide high surface to volume ratio, while maintaining good chemical and thermal stabilities with minimal power consumption and low weight. In recent years, various processing routes have been developed for the synthesis of 1-D nanostructured metal-oxides such as hydrothermal, ultrasonic irradiation, electrospinning, anodization, sol-gel, molten-salt, carbothermal reduction, solid-state chemical reaction, thermal evaporation, vapor-phase transport, aerosol, RF sputtering, molecular beam epitaxy, chemical vapor deposition, gas-phase assisted nanocarving, UV lithography and dry plasma etching. A variety of sensor fabrication processing routes have also been developed. Depending on the materials, morphology and fabrication process the performance of the sensor towards a specific gas shows a varying degree of success. This article reviews and evaluates the performance of 1-D nanostructured metal-oxide gas sensors based on ZnO, SnO(2), TiO(2), In(2)O(3), WO(x), AgVO(3), CdO, MoO(3), CuO, TeO(2) and Fe(2)O(3). Advantages and disadvantages of each sensor are summarized, along with the associated sensing mechanism. Finally, the article concludes with some future directions of research.

A 14nm logic technology using 2 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nd</sup> -generation FinFET transistors with a novel subfin doping technique, self-aligned double patterning (SADP) for critical patterning layers, and air-gapped interconnects at performance-critical layers is described. The transistors feature rectangular fins with 8nm fin width and 42nm fin height, 4 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> generation high-k metal gate, and 6 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> -generation strained silicon, resulting in the highest drive currents yet reported for 14nm technology. This technology is in high-volume manufacturing.