Artificial Optoelectronic Synapse with Nanolayered GaN/AlN Periodic Structure for Neuromorphic ComputingXiayang Hua, Lai Wang, Mohamed Al Khalfioui et al.|ACS Applied Nano Materials|2023Cited by 22
Remote Epitaxy and Exfoliation of GaN via GrapheneXu Han, Lai Wang, Jing Ning et al.|ACS Applied Electronic Materials|2022Cited by 21
Van der Waals coherent epitaxy of GaN and InGaN/GaN multi-quantum-well via a graphene inserted layerJiadong Yu, Hongtao Li, Bing Xiong et al.|Optical Materials Express|2021Cited by 4
Influence of Graphene Stability on III-Nitride Remote Epitaxy for ExfoliationXu Han, Lai Wang, Bing Xiong et al.|ACS Applied Nano Materials|2023Cited by 4
Metal–Organic Vapor‐Phase Epitaxy of Semipolar InGaN Quantum Dots Based on GaN V‐Shaped PitsXun Wang, Lai Wang, Jiadong Yu et al.|physica status solidi (RRL) - Rapid Research Letters|2022Cited by 2