Sarah Kurtz

We present evidence for a strong interaction between the conduction band and a narrow resonant band formed by nitrogen states in $\mathrm{Ga}{}_{1\ensuremath{-}x}\mathrm{In}{}_{x}\mathrm{N}{}_{y}\mathrm{As}{}_{1\ensuremath{-}y}$ alloys. The interaction leads to a splitting of the conduction band into two subbands and a reduction of the fundamental band gap. An anticrossing of the extended states of the conduction band of the $\mathrm{Ga}{}_{1\ensuremath{-}x}\mathrm{In}{}_{x}\mathrm{As}$ matrix and the localized nitrogen resonant states is used to model the interaction. Optical transitions associated with the energy minima of the two subbands and the characteristic anticrossing behavior of the transitions under applied hydrostatic pressure have been unambiguously observed using photomodulation spectroscopy. The experimental results are in excellent quantitative agreement with the model.

ABSTRACT As photovoltaic penetration of the power grid increases, accurate predictions of return on investment require accurate prediction of decreased power output over time. Degradation rates must be known in order to predict power delivery. This article reviews degradation rates of flat‐plate terrestrial modules and systems reported in published literature from field testing throughout the last 40 years. Nearly 2000 degradation rates, measured on individual modules or entire systems, have been assembled from the literature, showing a median value of 0·5%/year. The review consists of three parts: a brief historical outline, an analytical summary of degradation rates, and a detailed bibliography partitioned by technology. Copyright © 2011 John Wiley & Sons, Ltd.

Absorbed sunlight in a solar cell produces electrons and holes. However, at the open-circuit condition, the carriers have no place to go. They build up in density, and ideally, they emit external luminescence that exactly balances the incoming sunlight. Any additional nonradiative recombination impairs the carrier density buildup, limiting the open-circuit voltage. At open circuit, efficient external luminescence is an indicator of low internal optical losses. Thus, efficient external luminescence is, counterintuitively, a necessity for approaching the Shockley–Queisser (SQ) efficiency limit. A great solar cell also needs to be a great light-emitting diode. Owing to the narrow escape cone for light, efficient external emission requires repeated attempts and demands an internal luminescence efficiency 90%.

High-efficiency multijunction or tandem solar cells based on group III–V semiconductor alloys are applied in a rapidly expanding range of space and terrestrial programs. Resistance to high-energy radiation damage is an essential feature of such cells as they power most satellites, including those used for communications, defense, and scientific research. Recently we have shown that the energy gap of In1−xGaxN alloys potentially can be continuously varied from 0.7 to 3.4 eV, providing a full-solar-spectrum material system for multijunction solar cells. We find that the optical and electronic properties of these alloys exhibit a much higher resistance to high-energy (2 MeV) proton irradiation than the standard currently used photovoltaic materials such as GaAs and GaInP, and therefore offer great potential for radiation-hard high-efficiency solar cells for space applications. The observed insensitivity of the semiconductor characteristics to the radiation damage is explained by the location of the band edges relative to the average dangling bond defect energy represented by the Fermi level stabilization energy in In1−xGaxN alloys.