Tsz Wing Lo

The phase transition of multilayer MoS2 nanosheets from semiconducting 2H to metallic 1T (2H/1T) has been realized mainly by chemical methods (e.g., Li intercalation). Here, we develop a simple yet effective method, cyclic voltammetry, to successfully tune the 2H/1T phase transition of multilayer MoS2 nanosheets without using intercalation species. The phase transition is triggered by the electrochemical incorporation of S vacancies (obtained by electrochemical etching), which on the one hand injects electrons into the framework of S–Mo–S and on the other hand facilitates the sliding of S planes. Density functional theory calculations show that O doping in the framework of S–Mo–S decreases the energy barrier for forming S vacancies and stabilizes the 1T-phase by occupying the 4d orbital of Mo. Our calculations further show that the presence of S vacancies and O incorporation not only reduces the bandgap of MoS2, indicating an increased conductivity, but also decreases the hydrogen adsorption free energy, implying significant improvement of hydrogen evolution reaction (HER) activity. Indeed, the overpotential and Tafel plot of the electrochemically treated MoS2 nanosheets are decreased respectively by 174 mV and 25 mV/dec at a cathodic current density of 10 mA cm–2 compared with pristine 2H-MoS2 nanosheets. The HER experiment also reveals the order of catalytical activity for the studied phases and structural defects: 1T-MoS2 > S vacancies > O doping >2H-MoS2. Our study has provided a new route to control the phase transition of multilayer MoS2 nanosheets with promising applications potentially in catalysis and optoelectronics.

Two-dimensional (2D) layered materials have been an exciting frontier for exploring emerging physics at reduced dimensionality, with a variety of exotic properties demonstrated at 2D limit. Here, we report the first experimental discovery of in-plane antiferroelectricity in a 2D material ${\ensuremath{\beta}}^{\ensuremath{'}}\ensuremath{-}{\mathrm{In}}_{2}{\mathrm{Se}}_{3}$, using optical and electron microscopy consolidated by first-principles calculations. Different from conventional 3D antiferroelectricity, antiferroelectricity in ${\ensuremath{\beta}}^{\ensuremath{'}}\ensuremath{-}{\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ is confined within the 2D layer and generates the unusual nanostripe ordering: the individual nanostripes exhibit local ferroelectric polarization, whereas the neighboring nanostripes are antipolar with zero net polarization. Such a unique superstructure is underpinned by the intriguing competition between 2D ferroelectric and antiferroelectric ordering in ${\ensuremath{\beta}}^{\ensuremath{'}}\ensuremath{-}{\mathrm{In}}_{2}{\mathrm{Se}}_{3}$, which can be preserved down to single-layer thickness as predicted by calculation. Besides demonstrating 2D antiferroelectricity, our finding further resolves the true nature of the ${\ensuremath{\beta}}^{\ensuremath{'}}\ensuremath{-}{\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ superstructure that has been under debate for over four decades.

Abstract Two-dimensional (2D) materials exhibit remarkable mechanical properties, enabling their applications as flexible and stretchable ultrathin devices. As the origin of several extraordinary mechanical behaviors, ferroelasticity has also been predicted theoretically in 2D materials, but so far lacks experimental validation and investigation. Here, we present the experimental demonstration of 2D ferroelasticity in both exfoliated and chemical-vapor-deposited β’ -In 2 Se 3 down to few-layer thickness. We identify quantitatively 2D spontaneous strain originating from in-plane antiferroelectric distortion, using both atomic-resolution electron microscopy and in situ X-ray diffraction. The symmetry-equivalent strain orientations give rise to three domain variants separated by 60° and 120° domain walls (DWs). Mechanical switching between these ferroelastic domains is achieved under ≤0.5% external strain, demonstrating the feasibility to tailor the antiferroelectric polar structure as well as DW patterns through mechanical stimuli. The detailed domain switching mechanism through both DW propagation and domain nucleation is unraveled, and the effects of 3D stacking on such 2D ferroelasticity are also discussed. The observed 2D ferroelasticity here should be widely available in 2D materials with anisotropic lattice distortion, including the 1T’ transition metal dichalcogenides with Peierls distortion and 2D ferroelectrics such as the SnTe family, rendering tantalizing potential to tune 2D functionalities through strain or DW engineering.

Hot carriers (HCs) and thermal effects, stemming from plasmon decays, are crucial for most plasmonic applications. However, quantifying these two effects remains extremely challenging due to the experimental difficulty in accurately measuring the temperature at reaction sites. Herein, we provide a novel strategy to disentangle HCs from photothermal effects based on the different traits of heat dissipation (long range) and HCs transport (short range), and quantitatively uncover the dominant and potential-dependent role of photothermal effect by investigating the rapid- and slow-response currents in plasmon-mediated electrochemistry at nanostructured Ag electrode. Furthermore, the plasmoelectric surface potential is found to contribute to the rapid-response currents, which is absent in the previous studies.

Spin-forbidden excitons in monolayer transition metal dichalcogenides are optically inactive at room temperature. Probing and manipulating these dark excitons are essential for understanding exciton spin relaxation and valley coherence of these 2D materials. Here, we show that the coupling of dark excitons to a metal nanoparticle-on-mirror cavity leads to plasmon-induced resonant emission with the intensity comparable to that of the spin-allowed bright excitons. A three-state quantum model combined with full-wave electrodynamic calculations reveals that the radiative decay rate of the dark excitons can be enhanced by nearly 6 orders of magnitude through the Purcell effect, therefore compensating its intrinsic nature of weak radiation. Our nanocavity approach provides a useful paradigm for understanding the room-temperature dynamics of dark excitons, potentially paving the road for employing dark exciton in quantum computing and nanoscale optoelectronics.