Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN AlloysJohn F. Muth, J. F. Schetzina, R. M. Kolbas et al.|MRS Internet Journal of Nitride Semiconductor Research|1999Cited by 171
Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic CathodoluminescenceZhonghai Yu, J. F. Schetzina, J.D. Brown et al.|MRS Internet Journal of Nitride Semiconductor Research|1998Cited by 48
Reactive MBE Growth of GaN and GaN:H on GaN/SiC SubstratesMark A. Johnson, J. A. Edmond, Zhonghai Yu et al.|MRS Proceedings|1996Cited by 33
Study of the epitaxial–lateral-overgrowth (ELO) process for GaN on sapphireZhonghai Yu, J. F. Schetzina, Mark A. Johnson et al.|Journal of Crystal Growth|1998Cited by 29
Absorption Coefficient and Refractive Index of GaN, AIN and AlGaN AlloysJohn F. Muth, J. F. Schetzina, R. M. Kolbas et al.|MRS Proceedings|1998Cited by 21